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PD - 91782
IRFE310 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786U (R) HEXFET TRANSISTOR JANTXV2N6786U [REF:MIL-PRF-19500/556]
N-CHANNEL 400Volt, 3.6, HEXFET
The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. The LCC provides designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the LCC package to meet the specific needs of the power market by increasing the size of the bottom source pad, thereby enhancing the thermal and electrical performance. The lid of the package is grounded to the source to reduce RF interference. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits, and virtually any application where high reliability is required.
Product Summary
Part Number IRFE310 BVDSS 400V RDS(on) 3.6 ID 1.25A
Features:
n n n n n n
Hermetically Sealed Simple Drive Requirements Ease of Paralleling Small footprint Surface Mount Lightweight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Surface Temperature Weight IRFE310, JANTX-, JANTXV-, 2N6786U Units 1.25 A 0.80 5.5 15 W 0.12 W/C 20 V 34 mJ 2.8 V/ns -55 to 150
o
C
300 ( for 5 seconds) 0.42 (typical)
g
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10/9/98
IRFE310, JANTX-, JANTXV-, 2N6786U Devices
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
400 -- -- -- 2.0 0.87 -- -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.37 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 5.0 15 -- -- 3.6 3.7 4.0 -- 25 250 100 -100 8.4 1.6 5.0 15 20 35 30 -- -- V V/C
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 10V, ID = 0.8A VGS = 10V, ID = 1.25A VDS = VGS, ID = 250A VDS > 15V, IDS = 0.8A VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 10V, ID = 1.25A VDS = Max Rating x 0.5 VDD = 15V, ID = 1.25A, RG = 7.5
V S( ) A
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LD LS
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance
nA nC
ns
nH
Measured from drain Modified MOSFET symlead, 6mm (0.25 in) bol showing the internal from package to center inductances. of die. Measured from source lead, 6mm (0.25 in) from package to source bonding pad.
Ciss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
190 65 24
-- -- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 1.25 5.5 1.4 540 4.5
Test Conditions
Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25C, IS = 1.25A, VGS = 0V Tj = 25C, IF = 1.25A, di/dt 100A/s VDD 50V
A
V ns C
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJ-PCB Junction-to-Case Junction-to-PC board
Min Typ Max Units
-- -- -- -- 8.3 27 C/W
Test Conditions
soldered to a copper-clad PC board
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IRFE310, JANTX-, JANTXV-, 2N6786U Devices
10
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1
1
4.5V
4.5V
0.1
0.1
0.01 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
0.01 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
3.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 1.2A
I D , Drain-to-Source Current (A)
2.5
2.0
1
TJ = 150 C
1.5
1.0
TJ = 25 C
V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0
0.5
0.1 4.0
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFE310, JANTX-, JANTXV-, 2N6786U Devices
500
400
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 1.25 A VDS = 320V VDS = 200V VDS = 80V
C, Capacitance (pF)
15
300
Ciss Coss
10
200
Crss
100
5
0 1 10 100
0 0 2 4 6
FOR TEST CIRCUIT SEE FIGURE 13
8 10 12
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
10
100
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
I D , Drain Current (A)
10 10us 100us 1ms 0.1 10ms
TJ = 150 C
1
1
TJ = 25 C
0.1 0.4
V GS = 0 V
0.6 0.8 1.0 1.2 1.4
0.01
TC = 25 C TJ = 150 C Single Pulse
10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRFE310, JANTX-, JANTXV-, 2N6786U Devices
1.25
V DS
1.00
RD
VGS RG
D.U.T.
+
I D , Drain Current (A)
-V DD
0.75
10V
Pulse Width 1 s Duty Factor 0.1 %
0.50
Fig 10a. Switching Time Test Circuit
VDS 90%
0.25
0.00 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
D = 0.50
0.20
1
0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.01 0.1 1 P DM t1 t2
0.1 0.00001
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFE310, JANTX-, JANTXV-, 2N6786U Devices
75
EAS , Single Pulse Avalanche Energy (mJ)
15V
60
ID 0.56A 0.79A BOTTOM 1.25A TOP
VDS
L
D R IV E R
45
RG
D .U .T
IA S
+ V - DD
A
30
10V 20V
tp
0 .01
15
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
V (B R )D S S tp
Starting TJ , Junction Temperature( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
10V 12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRFE310, JANTX-, JANTXV-, 2N6786U Devices
Notes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. Refer to current HEXFET reliability report. @ VDD = 50 V, Starting TJ = 25C, EAS = [0.5 * L * (IL2) ] Peak IL =1.25A, VGS =10 V, 25 RG 200
ISD 1.25A, di/dt 180 A/s,
VDD BVDSS, TJ 150C, Suggested RG = 50
Pulse width 300 s; Duty Cycle 2%
Case Outline and Dimensions -- Leadless Chip Carrier (LCC) Package
IR Case Style Leadless Chip Carrier (LCC)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 10/98
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